sot323 npn silicon planar general purpose transistor issue 1 - december 1998 partmarking detail: - t14 absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo 30 v collector-emitter voltage v ces 30 v collector-emitter voltage v ceo 30 v emitter-base voltage v ebo 5v continuous collector current i c 100 ma peak pulse current i em 200 ma base current i bm 200 ma power dissipation at t amb =25c p tot 330 mw operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. typ. max. unit conditions. collector cut-off current i cbo 15 5 na m a v cb = 30v v cb = 30v, t amb =150c collector-emitter saturation voltage v ce(sat) 90 250 mv i c =10ma, i b =0.5ma 200 600 mv i c =100ma, i b =5ma 300 600 mv i c =10ma* base-emitter saturation voltage v be(sat) 700 900 mv i c =10ma ,i b =0.5ma i c =100ma,i b =5ma base-emitter voltage v be 580 650 750 770 mv i c =2ma, v ce =5v i c =10ma, v ce =5v * collector-emitter saturation voltage at i c = 10ma for the characteristics going through the operating point i c = 11ma, v ce = 1v at constant base current. ZUMT848B
typical characteristics
electrical characteristics (continued) parameter symbol min. typ. max. unit conditions. noise figure n C 2 10 db v cb = 5v, i c =200 m a, r g =2k w , f=1khz, d f=200hz CCCdb v cb = 5v, i c =200 m a, r g =2k w , f=30hz to 15khz at 3db points equivalent noise voltage e n CCCnv v cb = 5v, i c =200 m a, r g =2k w , f=10hz to 50hz at 3db points dynamic characteristics group b h ie 3.2 4.5 8.5 k w v ce =5v ic=2ma f=1khz group b h re 2 x10 -4 group b h fe 240 330 500 group b h oe C30 60 m s static forward current ratio group b h fe 150 i c =0.01ma,v ce =5v 200 290 450 i c =2ma, v ce =5v C 200 C i c =100ma,v ce =5v transition frequency f t C 300 C mhz i c =10ma,v ce =5v f=100mhz collector-base capacitance c obo 2.5 4.5 pf v cb =10v, f=1mhz emitter-base capacitance c ibo 9 pf v eb =0.5v, f=1mhz ZUMT848B
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